The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Jul. 22, 2014
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Fabrizio Cortigiani, Padua, IT;

Adolfo De Cicco, Castel d'Azzano, IT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 1/26 (2006.01); G01K 1/02 (2006.01); H02H 5/04 (2006.01); H03K 17/082 (2006.01); H02H 6/00 (2006.01); H02H 3/07 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
G01K 1/026 (2013.01); H02H 3/07 (2013.01); H02H 5/04 (2013.01); H02H 6/00 (2013.01); H03K 17/0822 (2013.01); H03K 2017/0806 (2013.01);
Abstract

The present disclosure proposes the placing of temperature sensors embedded in the power semiconductor device. In this, at least one of the embedded temperature sensors is placed within or close to the heat source, active areas or channels of the power semiconductor circuit, and at least one of the embedded temperature sensors is placed more apart from the heat source, active areas or channels of the power semiconductor circuit. Furthermore, a new the temperature measurement method is provided, with timing of the temperature measurement and adjusting measurement parameters to appropriate threshold values.


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