The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Jun. 22, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Pantelis Sarais, Villach, AT;
David Seebacher, Villach, AT;
Peter Singerl, Villach, AT;
Herwig Wappis, Drobollach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/14 (2006.01); H03F 1/02 (2006.01); H03F 1/30 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0205 (2013.01); H03F 1/301 (2013.01); H03F 3/193 (2013.01); H03F 3/21 (2013.01); H03F 2200/451 (2013.01); H03F 2200/462 (2013.01); H03F 2200/468 (2013.01);
Abstract
Techniques are provided for adapting a bias provided to a radio frequency (RF) power amplifier (PA), so as to achieve linear operation over a wide range of conditions. The techniques use open-loop temperature compensation based upon a sensed current during periods when the RF PA is active and inactive. A closed-loop control technique is enabled when the RF PA is inactive. The combined control techniques compensate for temperature variation as well as long-term drift of the semiconductor properties of the devices within the RF PA.