The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Dec. 14, 2016
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
The University of Tokyo, Bunkyo-ku, Tokyo, JP;
Teruhisa Kotani, Sakai, JP;
Yasuhiko Arakawa, Bunkyo-ku, JP;
Sharp Kabushiki Kaisha, Sakai, JP;
THE UNIVERSITY OF TOKYO, Tokyo, JP;
Abstract
A nitride semiconductor device includes a GaN substrate in which an angle between a principal surface and an m-plane of GaN is −5° or more and +5° or less, a first intermediate layer disposed on the principal surface of the substrate and made of AlGaN, 0≤z≤1, and a second intermediate layer disposed on a principal surface of the first intermediate layer, having an Al content different from that of the first intermediate layer, and made of AlInGaN, 0≤x1≤1, 0≤y1≤1. A quantum cascade laser includes the nitride semiconductor device.