The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Jun. 16, 2017
Applicant:
Gwangju Institute of Science and Technology, Gwangju, KR;
Inventors:
Assignee:
Gwangju Institute of Science and Technology, Gwangju, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 29/68 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 45/147 (2013.01); G11C 13/0007 (2013.01); G11C 13/0097 (2013.01); H01L 27/2436 (2013.01); H01L 29/685 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/149 (2013.01); H01L 45/1608 (2013.01); H01L 29/7869 (2013.01);
Abstract
There is provided a non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode.
Jang, Jae. (2018). Reram using stack of iron oxide and graphene oxide films (U.S. Patent No. 10038140). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10038140
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile