The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Sep. 12, 2017
Epistar Corporation, Hsinchu, TW;
Chien-Fu Huang, Hsinchu, TW;
Yao-Ning Chan, Hsinchu, TW;
Tzu Chieh Hsu, Hsinchu, TW;
Yi-ming Chen, Hsinchu, TW;
Hsin-Chih Chiu, Hsinchu, TW;
Chih-Chiang Lu, Hsinchu, TW;
Chia-liang Hsu, Hsinchu, TW;
Chun-Hsien Chang, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.