The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Feb. 17, 2016
Genesis Photonics Inc., Tainan, TW;
Yi-Ru Huang, Tainan, TW;
Tung-Lin Chuang, Tainan, TW;
Yan-Ting Lan, Tainan, TW;
Sheng-Tsung Hsu, Tainan, TW;
Chih-Ming Shen, Tainan, TW;
Jing-En Huang, Tainan, TW;
Teng-Hsien Lai, Tainan, TW;
Hung-Chuan Mai, Kaohsiung, TW;
Kuan-Chieh Huang, New Taipei, TW;
Shao-Ying Ting, Tainan, TW;
Genesis Photonics Inc., Tainan, TW;
Abstract
A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.