The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Sep. 22, 2017
Nichia Corporation, Anan-shi, Tokushima, JP;
Makoto Abe, Tokushima, JP;
NICHIA CORPORATION, Anan-Shi, JP;
Abstract
A light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; an active layer comprising a plurality of well layers and a plurality of barrier layers, and being located between the n-side semiconductor layer and the p-side semiconductor layer. The plurality of barrier layers comprises a final barrier layer, which is a layer of the active layer that is closest to the p-side semiconductor layer. The p-side semiconductor layer comprises, from an active layer-side, a first p-side semiconductor layer, which is a layer of the p-side semiconductor layer that is closest to the active layer, and a second p-side semiconductor layer containing a p-type dopant and having a bandgap greater than a bandgap of the final barrier layer. The first p-side semiconductor layer has a bandgap smaller than the bandgap of the final barrier layer and greater than a bandgap of any of the well layers, and has a thickness smaller than a thickness of the final barrier layer.