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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10038106 B1

PDFFull Text
Date of Patent:
Jul. 31, 2018

Filed:

Jun. 29, 2017

Termination structure for gallium nitride schottky diode

Applicant:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventors:

TingGang Zhu, Cupertino, CA (US);

Anup Bhalla, Santa Clara, CA (US);

Ping Huang, Shanghai, CN;

Yueh-Se Ho, Sunnyvale, CA (US);

Assignee:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Attorney:

Innovation Counsel LLP

Primary Examiner:

Daniel Luke

Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/0217 (2013.01); H01L 21/0254 (2013.01); H01L 21/28581 (2013.01); H01L 21/31111 (2013.01); H01L 29/0619 (2013.01); H01L 29/0688 (2013.01); H01L 29/2003 (2013.01); H01L 29/405 (2013.01); H01L 29/417 (2013.01); H01L 29/66212 (2013.01); H01L 21/56 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 27/0814 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/11616 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13022 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/12032 (2013.01);
Abstract

A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer includes a step recess to further enhance the field spreading effect of the termination structure.

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