The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Dec. 02, 2015
Jun HU, San Bruno, CA (US);
Zhiyun Luo, San Jose, CA (US);
Fei Wang, San Jose, CA (US);
Mengyu Pan, Shanghai, CN;
Jun Hu, San Bruno, CA (US);
Zhiyun Luo, San Jose, CA (US);
Fei Wang, San Jose, CA (US);
Mengyu Pan, Shanghai, CN;
HUNTECK SEMICONDUCTOR (SHANGHAI) CO., Ltd, Shanghai, CN;
Abstract
A semiconductor power device includes a plurality of power transistor cells each having a trenched gate disposed in a gate trench opened in a semiconductor substrate wherein a plurality of the trenched gates further include a shielded bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed at a top portion of the gate trench by an inter-electrode insulation layer. At least one of the shielded bottom electrode is connected a source metal and at least one of the top electrodes in the gate trench is connected to a source metal of the power device.