The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Feb. 03, 2018
Applicant:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Inventor:
Hideaki Tsuchiko, San Jose, CA (US);
Assignee:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/10 (2006.01); H01L 29/808 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66893 (2013.01); H01L 21/76264 (2013.01); H01L 29/1058 (2013.01); H01L 29/1066 (2013.01); H01L 29/66901 (2013.01); H01L 29/808 (2013.01); H01L 29/0692 (2013.01); H01L 29/402 (2013.01);
Abstract
A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is connected to a drain electrode of another JFET stage.