The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Aug. 11, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jong-Hyuk Kim, Seoul, KR;
Kang-Ill Seo, Chungcheongbuk-do, KR;
Hyun-Jae Kang, Gunpo-si, KR;
Deok-Han Bae, Anyang-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of fabricating a semiconductor device is provided. A plurality of target patterns is formed on a substrate. The plurality of target patterns is extended in parallel to each other along a first direction. A first mask pattern extending in the first direction and including a plurality of first openings is formed. A second mask pattern extending in a second direction crossing the first direction and including a plurality of second openings is formed. Each second opening overlaps each first opening to form an overlapped opening region. A region of the plurality of target patterns is etched through the overlapped opening region using the first mask pattern and the second mask pattern as a etch mask. The region of the plurality of target patterns is overlapped with the overlapped opening region.