The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Aug. 09, 2016
Applicant:
Rohm Co., Ltd.;
Inventors:
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/207 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 23/00 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 29/207 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/73265 (2013.01);
Abstract
A nitride semiconductor device according to the present invention includes a nitride semiconductor layer including an electron transit layer and an electron supply layer which is in contact with the electron transit layer and which has a composition different from that of the electron transit layer, a gate electrode on the nitride semiconductor layer and a gate insulating film between the gate electrode and the nitride semiconductor layer. A region whose depth is 250 nm from an interface between the gate insulating film and the gate electrode includes a region which has a deep acceptor concentration equal to or more than 1.0×10cm.