The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Dec. 12, 2016
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Soo Chang Kang, Seoul, KR;
Seung Hyun Kim, Seoul, KR;
Dae Won Hwang, Seoul, KR;
Yong Won Lee, Bucheon-si, KR;
Abstract
A method for fabricating a semiconductor device is disclosed. A plurality of trenches is formed at a predetermined cell pitch in an upper surface portion of a substrate. A first insulation film is formed on the substrate. A gate electrode is formed and partially filled within each trench. A first conductivity type region is formed in the upper surface portion of the substrate between the trenches. A second conductivity type region is formed in a side surface of the substrate between the trenches and the first conductivity type region. A second insulation film is formed covering the gate electrode within each trench, wherein an upper surface of the second insulation film is positioned lower than an upper surface of the substrate. A source metal layer is formed on the second insulation film and electrically connected to the first conductivity type region and the second conductivity type region.