The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2018

Filed:

Oct. 16, 2017
Applicant:

AU Optronics Corporation, Hsinchu, TW;

Inventors:

Te-Ming Chen, Hsinchu County, TW;

Tsung-Han Chen, New Taipei, TW;

Sheng-Chen Wu, Hsinchu County, TW;

Geng-Qun Zhou, Taoyuan, TW;

Ying-Hsien Chen, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0203 (2014.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); H01L 27/14612 (2013.01); H01L 27/14623 (2013.01); H01L 27/14636 (2013.01); H01L 27/14649 (2013.01); H01L 27/14663 (2013.01); H01L 31/0203 (2013.01);
Abstract

A light detector including an invisible light converting substrate, a light sensing element, a first protection layer, a thin film transistor, a first conductive pattern and a second protection layer is provided. The light sensing element and the thin film transistor are disposed on the invisible light converting substrate. The first protection layer covers the invisible light converting substrate and a second electrode of the light sensing element. The first protection layer has a via overlapped with the second electrode of the light sensing element. The first conductive pattern is disposed on the first protection layer and electrically connected to the second electrode of the light sensing element through the via of the first protection layer. The first conductive pattern is electrically connected between the second electrode of the light sensing element and a source of the thin film transistor.


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