The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Apr. 08, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Byoungkeun Son, Suwon-si, KR;
Hansoo Kim, Seoul, KR;
Jinho Kim, Hwasung-si, KR;
Kihyun Kim, Hwasung-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 27/11582 (2017.01); H01L 27/11551 (2017.01); H01L 27/11556 (2017.01); H01L 27/11553 (2017.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
H01L 21/28 (2013.01); H01L 27/11551 (2013.01); H01L 27/11553 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 29/42324 (2013.01); H01L 29/42364 (2013.01); H01L 29/66666 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/7827 (2013.01); H01L 29/7841 (2013.01); H01L 29/7883 (2013.01); H01L 29/7889 (2013.01); H01L 27/11519 (2013.01);
Abstract
Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.