The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Dec. 03, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/38 (2006.01); G11C 29/44 (2006.01); G11C 29/00 (2006.01); G11C 29/40 (2006.01); G11C 11/401 (2006.01);
U.S. Cl.
CPC ...
G11C 29/38 (2013.01); G11C 29/40 (2013.01); G11C 29/44 (2013.01); G11C 29/4401 (2013.01); G11C 29/785 (2013.01); G11C 11/401 (2013.01);
Abstract
A semiconductor memory device includes a memory cell array including a plurality of memory cell rows; and a data control circuit configured to, sequentially read a first unit of data from N memory cell rows of the plurality of memory cell rows, generate merged test results by comparing bits read from the first units of the N memory cell rows, and output the merged test results, during the test mode of the semiconductor memory device. Therefore, test time for testing the semiconductor memory device may be greatly reduced because a test device may determine pass/fail of the data of the unit of repair unit on one read operation.