The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2018

Filed:

Apr. 21, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Markus Brink, White Plains, NY (US);

Joy Cheng, Taipei, TW;

Gregory S. Doerk, Great Neck, NY (US);

Michael A. Guillorn, Yorktown Heights, NY (US);

Kafai Lai, Poughkeepsie, NY (US);

Hsinyu Tsai, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5077 (2013.01); H01L 21/0271 (2013.01);
Abstract

A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.


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