The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2018

Filed:

Nov. 06, 2015
Applicant:

Tpk Touch Solutions Inc., Taipei, TW;

Inventors:

Shun-Jie Yang, New Taipei, TW;

Hong-Siang Shao, Taipei, TW;

En-Chin Chang, Taipei, TW;

Hsi-Chien Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/041 (2006.01); C23F 4/00 (2006.01); H01L 21/321 (2006.01); H01L 21/3065 (2006.01); B82Y 15/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G06F 3/041 (2013.01); B82Y 15/00 (2013.01); B82Y 40/00 (2013.01); C23F 4/00 (2013.01); G06F 2203/04103 (2013.01); H01L 21/3065 (2013.01); H01L 21/321 (2013.01);
Abstract

The present disclosure provides a method of forming a nanoscale conductive film. The method comprises providing a nanoscale base film, forming a first patterned insulating layer on the nanoscale base film, and etching the nanoscale base film in a current generation system, using the first patterned insulating layer as a mask. The nanoscale base film includes a substrate, a first overcoat on one side of the substrate, and a first nano material layer laminated between the substrate and the first overcoat. The first patterned insulating layer is formed on the first overcoat, exposing portions of the first overcoat. In the first nano material layer, first regions are masked by the first insulating layer and second regions are not masked by the first insulating layer. The first regions and the second regions are electrically isolated from each other after etching the nanoscale base film in the current generation system.


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