The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Nov. 30, 2016
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Benjamin M. Johnston, Los Gatos, CA (US);
John White, Hayward, CA (US);
Thomas Laidig, Richmond, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70808 (2013.01); G03F 7/708 (2013.01); G03F 7/70775 (2013.01); G03F 7/70858 (2013.01); G03F 7/70866 (2013.01); G03F 7/70933 (2013.01); G03F 9/00 (2013.01); G03F 9/70 (2013.01); G03F 9/7049 (2013.01); G03F 9/7057 (2013.01); G03F 2009/005 (2013.01);
Abstract
Embodiments of the present disclosure generally relate to systems and methods for performing photolithography processes. In one embodiment, laminar gas flow is provided inside a photolithography system during operation. With laminar gas flow instead of turbulent gas flow inside the system, accuracy of the measurement of the location of a substrate disposed inside the system is improved due to the improved signal integrity of interferometers.