The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2018

Filed:

Jan. 24, 2014
Applicant:

Mcube Inc., San Jose, CA (US);

Inventors:

Wenhua Zhang, San Jose, CA (US);

Sudheer Sridharamurthy, San Jose, CA (US);

Shingo Yoneoka, San Jose, CA (US);

Terrence Lee, San Jose, CA (US);

Assignee:

mCube Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); G01C 19/574 (2012.01);
U.S. Cl.
CPC ...
G01C 19/574 (2013.01);
Abstract

A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.


Find Patent Forward Citations

Loading…