The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Mar. 20, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ralf Richter, Radebeul, DE;

Stefan Duenkel, Dresden, DE;

Sven Beyer, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); H03K 19/0185 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H03K 19/0013 (2013.01); H01L 29/78391 (2014.09); H03K 19/018585 (2013.01);
Abstract

In illustrative embodiments disclosed herein, a logic element may be provided on the basis of a non-volatile storage mechanism, such as ferroelectric transistor elements, wherein the functional behavior may be adjusted or programmed on the basis of a shift of threshold voltages. To this end, a P-type transistor element and an N-type transistor element may be connected in parallel, while a ferroelectric material may be used so as to establish a first polarization state resulting in a first functional behavior and a second polarization state resulting in a second different functional behavior. For example, the logic element may enable a switching between P-type transistor behavior and N-type transistor behavior depending on the polarization state.


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