The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Feb. 05, 2013
Applicants:

Tokyo Institute of Technology, Tokyo, JP;

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;

Inventors:

Ryoji Kanno, Kawasaki, JP;

Masaaki Hirayama, Yokohama, JP;

Yuki Kato, Susono, JP;

Takamasa Otomo, Susono, JP;

Mitsuru Sakano, Toyota, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 10/05 (2010.01); H01M 10/0562 (2010.01); H01B 1/10 (2006.01); C01B 17/20 (2006.01); C01G 19/00 (2006.01); C01G 17/00 (2006.01); C01B 25/14 (2006.01); H01M 10/052 (2010.01); H01M 4/62 (2006.01);
U.S. Cl.
CPC ...
H01M 10/0562 (2013.01); C01B 17/20 (2013.01); C01B 25/14 (2013.01); C01G 17/006 (2013.01); C01G 19/006 (2013.01); H01B 1/10 (2013.01); H01M 10/052 (2013.01); C01P 2002/72 (2013.01); C01P 2002/74 (2013.01); C01P 2002/77 (2013.01); C01P 2006/40 (2013.01); H01M 4/623 (2013.01); H01M 2220/20 (2013.01); H01M 2220/30 (2013.01); H01M 2300/0068 (2013.01);
Abstract

A main object of the present invention is to provide a sulfide solid electrolyte material having favorable ion conductivity and low reduction potential. The present invention solves the above-mentioned problem by providing a sulfide solid electrolyte material including an Melement (such as a Li element), an Melement (such as a Ge element, a Si element and a P element) and a S element, wherein the material has a peak at a position of 2θ=29.58°±0.50° in X-ray diffraction measurement using a CuKα line; and when a diffraction intensity at the peak of 2θ=29.58°±0.50° is regarded as Iand a diffraction intensity at a peak of 2θ=27.33°±0.50° is regarded as I, a value of I/Iis less than 0.50, and Mcontains at least P and Si.


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