The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Jun. 18, 2015
Applicant:
Ngk Insulators, Ltd., Aichi-prefecture, JP;
Inventors:
Shuuhei Higashihara, Nagoya, JP;
Makoto Iwai, Kasugai, JP;
Assignee:
NGK INSULATORS, LTD., Aichi-prefecture, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); C30B 19/12 (2006.01); H01L 33/20 (2010.01); H01L 21/02 (2006.01); C30B 9/10 (2006.01); C30B 19/02 (2006.01); C30B 29/40 (2006.01); H01L 33/16 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C30B 9/10 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 29/406 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 33/0075 (2013.01); H01L 33/16 (2013.01); H01L 33/20 (2013.01); H01L 33/12 (2013.01);
Abstract
A seed crystal substrateincludes a base bodyand a plurality of rows of stripe-shaped seed crystal layersformed on the base body. An upper faceof the seed crystal layeris (11-22) plane, a grooveis formed between the adjacent seed crystal layers, and a longitudinal direction of the grooveis a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.