The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Feb. 22, 2017
Applicant:
University of Virginia Patent Foundation, Charlottesville, VA (US);
Inventors:
Joe C. Campbell, Charlottesville, VA (US);
Min Ren, Charlottesville, VA (US);
Madison Woodson, Virginia Beach, VA (US);
Yaojia Chen, Jersey City, NJ (US);
Seth Bank, Austin, TX (US);
Scott Maddox, Austin, TX (US);
Assignee:
University of Virginia Patent Foundation, Charlottesville, VA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/0304 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 21/02549 (2013.01); H01L 31/03046 (2013.01);
Abstract
An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.