The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Nov. 29, 2016
Seiko Epson Corporation, Tokyo, JP;
Manabu Kudo, Suwa, JP;
Seiko Epson Corporation, , JP;
Abstract
A method of manufacturing a photoelectric conversion element including a semiconductor layer includes: forming an electrode; forming an insulating layer covering the electrode; forming an opening in a region of the insulating layer overlapping the electrode in a plan view; forming a covering layer of a semiconductor material on a surface of the insulating layer; and forming the semiconductor layer by patterning the covering layer. In the forming of the semiconductor layer, the semiconductor layer is formed such that an outer circumferential edge of the semiconductor layer is located on the outside of an inner circumferential edge of the opening in the plan view.