The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Feb. 03, 2017
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Hyun Jae Kim, Seoul, KR;
Jae Won Na, Seoul, KR;
Abstract
Disclosed are an oxide thin-film transistor and a method of fabricating the same. The oxide thin-film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; and an oxide thin film formed on the gate insulating layer, wherein the oxide thin film include a channel region, source region and drain regions disposed on the channel region and spaced apart from each other, and a concentration profile due to a dopant diffused from the gate insulating layer, wherein the channel region operates as a channel layer by the concentration profile.