The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Mar. 04, 2011
Applicants:

Jooho Moon, Seoul, KR;

Youngmin Jeong, Incheon, KR;

Tae Hwan Jun, Gyeonggi-do, KR;

Keun Kyu Song, Gyeonggi-do, KR;

Areum Kim, Gyeonggi-do, KR;

Yangho Jung, Seoul, KR;

Inventors:

Jooho Moon, Seoul, KR;

Youngmin Jeong, Incheon, KR;

Tae Hwan Jun, Gyeonggi-do, KR;

Keun Kyu Song, Gyeonggi-do, KR;

Areum Kim, Gyeonggi-do, KR;

Yangho Jung, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/477 (2006.01); H01L 29/66 (2006.01); C23C 18/12 (2006.01); H01L 31/0224 (2006.01); C09D 1/00 (2006.01); C09D 7/61 (2018.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C09D 1/00 (2013.01); C09D 7/61 (2018.01); C23C 18/1208 (2013.01); C23C 18/1216 (2013.01); C23C 18/1275 (2013.01); C23C 18/1279 (2013.01); C23C 18/1283 (2013.01); C23C 18/1287 (2013.01); H01L 21/02422 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02628 (2013.01); H01L 21/477 (2013.01); H01L 29/66969 (2013.01); H01L 31/022466 (2013.01);
Abstract

The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.


Find Patent Forward Citations

Loading…