The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Oct. 16, 2017
Renesas Electronics Corporation, Tokyo, JP;
Hitoshi Matsuura, Ibaraki, JP;
RENESAS ELECTRONICS COPRORATION, Tokyo, JP;
Abstract
The surface of an interlayer insulating film formed over an emitter coupling portion and the surface of an emitter electrode formed over the interlayer insulating film are caused to have a gentle shape, in particular, at the end of the emitter coupling portion, by forming the emitter coupling portion over a main surface of a semiconductor substrate and integrally with trench gate electrodes in order to form a spacer over the sidewall of the emitter coupling portion. Thereby, stress is dispersed, not concentrated in an acute angle portion of the emitter coupling portion when an emitter wire is coupled to the emitter electrode (emitter pad), and hence occurrence of a crack can be suppressed. Further, by forming the spacer, the concavities and convexities to be formed in the surface of the emitter electrode can be reduced, whereby the adhesiveness between the emitter electrode and the emitter wire can be improved.