The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Jan. 06, 2016
Applicant:
National University Corporation Hokkaido University, Sapporo-shi, Hokkaido, JP;
Inventors:
Assignee:
National University Corporation Hokkaido University, Sapporo-shi, Hokkaido, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/51 (2006.01); H01F 10/193 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66984 (2013.01); H01L 29/24 (2013.01); H01L 29/51 (2013.01); H01F 10/1933 (2013.01);
Abstract
This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is provided on the active layer. By using hydrogen ions and hydroxide ions which are formed by electrolysis of water, the crystal structure of the active layer is changed between a ferromagnetic metal and an antiferromagnetic insulating body.