The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Sep. 09, 2016
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 29/73 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0804 (2013.01); H01L 21/266 (2013.01); H01L 21/2652 (2013.01); H01L 29/732 (2013.01); H01L 29/7315 (2013.04);
Abstract
A method for making a super β NPN (SBNPN) transistor includes depositing a tetraethyl orthosilicate (TEOS) layer on a P type epitaxial layer; depositing a nitride layer on the TEOS layer; patterning an emitter region of the SBNPN transistor by selectively etching away portions of the nitride layer and the TEOS layer; depositing a second TEOS layer on top of the nitride layer, along sides of the nitride layer and the TEOS layer, and on top of the P type epitaxial layer; and implanting the P type epitaxial layer through the second TEOS layer with N type ions to form the emitter region of the SBNPN transistor.