The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Nov. 01, 2017
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Yusuke Kobayashi, Tsukuba, JP;

Manabu Takei, Tsukuba, JP;

Shinsuke Harada, Tsukuba, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0661 (2013.01); H01L 21/046 (2013.01); H01L 21/0475 (2013.01); H01L 29/1608 (2013.01); H01L 29/402 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract

In an active region, a contact trench in which a source electrode is embedded is provided. In a boundary region between the active region and the edge termination region, a tapered trench is provided. A second p-type base region is provided along an inner wall of the contact trench and extends to the boundary region to be provided along a base front surface and an inner wall of the tapered trench. An angle θof the side walls of the tapered trench with respect to a substrate front surface is smaller than an angle θof the side walls of the contact trench with respect to the substrate front surface. At a second mesa portion between the tapered trench and a step of the edge termination region, a gate runner is arranged on the base front surface, via a field oxide film.


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