The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Oct. 13, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Kyung Seok Min, Yongin-si, KR;

Mi Gyeong Gwon, Seoul, KR;

Seong Jin Nam, Seongnam-si, KR;

Sug Hyun Sung, Yongin-si, KR;

Young Hoon Song, Suwon-si, KR;

Young Mook Oh, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 21/311 (2006.01); H01L 29/165 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 21/76232 (2013.01); H01L 21/823431 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/1608 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01); H01J 37/32192 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract

Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.


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