The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Nov. 08, 2016
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); G09G 3/3233 (2016.01); G09G 3/3275 (2016.01); G09G 3/3266 (2016.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 27/3211 (2013.01); G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); G09G 3/3275 (2013.01); G09G 2300/0417 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0814 (2013.01); G09G 2300/0842 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/043 (2013.01); H01L 27/1222 (2013.01); H01L 27/1251 (2013.01); H01L 29/78621 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01); H01L 2227/323 (2013.01);
Abstract
There is provided a semiconductor device including a first pixel and a second pixel each including a transistor and an EL element including a pixel electrode electrically connected to the transistor. A ratio of a channel width (W) to a channel length (L) of the transistor in the first pixel is different from a ratio of a channel width (W) to a channel length (L) of the transistor in the second pixel.