The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Sep. 09, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Ordos Yuansheng Optoelectronics Co., Ltd., Ordos, Inner Mongolia, CN;

Inventors:

Xingyu Peng, Beijing, CN;

Fuqiang Li, Beijing, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); G02F 1/1343 (2006.01); G02F 1/1333 (2006.01); G02F 1/1362 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1248 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/134309 (2013.01); G02F 1/136209 (2013.01); G02F 1/136227 (2013.01); G02F 1/136286 (2013.01); H01L 29/4238 (2013.01); H01L 29/78675 (2013.01); G02F 2001/13685 (2013.01); G02F 2001/133357 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01); G02F 2201/50 (2013.01); G02F 2202/104 (2013.01);
Abstract

An array substrate and a fabrication method thereof, and a display panel are provided. The array substrate includes: a base substrate; an isolation layer on the base substrate; and a first thin film transistor on the isolation layer and a first gate line extending in a gate line direction, wherein the first thin film transistor includes a first gate electrode and a first active layer, the isolation layer includes a protrusion portion which extends in the gate line direction and protrudes upwards with respect to the base substrate, and each of orthogonal projections of the first active layer and the first gate electrode of the first thin film transistor on the main surface of the base substrate is overlapped with an orthogonal projection of the first lateral surface of the protrusion portion on the main surface of the base substrate.


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