The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

May. 20, 2015
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Eiji Sugiyama, Kanagawa, JP;

Yoshitaka Dozen, Kanagawa, JP;

Yumiko Ohno, Kanagawa, JP;

Hideaki Kuwabara, Kanagawa, JP;

Shunpei Yamazaki, Tokyo, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/78 (2006.01); H01L 21/67 (2006.01); H01L 27/12 (2006.01); H01L 21/311 (2006.01); H01L 21/77 (2017.01);
U.S. Cl.
CPC ...
H01L 21/7806 (2013.01); H01L 21/31111 (2013.01); H01L 21/6708 (2013.01); H01L 21/67132 (2013.01); H01L 27/1214 (2013.01); H01L 27/1266 (2013.01); H01L 2021/775 (2013.01);
Abstract

The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.


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