The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Sep. 20, 2017
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Katsuhiko Yamamoto, Toyama, JP;

Hajime Karasawa, Toyama, JP;

Kazuyuki Toyoda, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/30 (2006.01); H01L 21/31 (2006.01); H01L 21/027 (2006.01); G03F 7/00 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); G03F 7/0002 (2013.01); H01L 21/3065 (2013.01); H01L 21/31133 (2013.01);
Abstract

There is provided a technique for facilitating a patterning process by the DSA appropriately and efficiently. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including (a) accommodating in a process chamber a substrate having a guide pattern thereon; (b) supplying a plasma of a first process gas into the process chamber to subject the substrate to first one of a first process for hydrophilizing the substrate and a second process for hydrophobilizing the substrate; and (c) supplying a plasma of a second process gas into the process chamber to subject the substrate to second one of the first process and the second process other than the first one of the first process and the second process.


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