The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Sep. 23, 2016
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/46 (2006.01); C23C 16/24 (2006.01); C23C 16/52 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/24 (2013.01); C23C 16/44 (2013.01); C23C 16/45523 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/02208 (2013.01); H01L 21/02271 (2013.01); H01L 21/02532 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes: providing a substrate; and forming a film on the substrate by supplying a silicon hydride and a halogen element-free catalyst containing one of a group III element or a group V element to the substrate, under a condition that the silicon hydride is not thermally decomposed when the silicon hydride is present alone.