The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Jul. 13, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Charles A. Kilmer, Essex Junction, VT (US);

Kyu-hyoun Kim, Chappaqua, NY (US);

Adam J. McPadden, Underhill, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01); G11C 11/4096 (2006.01); G11C 11/4091 (2006.01); G11C 7/06 (2006.01); G11C 11/404 (2006.01); G11C 11/4097 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 7/062 (2013.01); G11C 11/404 (2013.01); G11C 11/4091 (2013.01); G11C 11/4097 (2013.01); G11C 2207/002 (2013.01);
Abstract

Techniques are disclosed for dynamic random access memory (DRAM) cell. The DRAM cell comprises a first bit line and a first complementary bit line, a storage capacitor having a first node coupled with the first complementary bit line, and a transistor selectable by a word line to couple a second node of the storage capacitor to the first bit line, wherein a voltage potential across the first bit line and the first complementary bit line when the transistor is selected is indicative of a bit of data.


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