The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Mar. 15, 2017
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Yingchang Chen, Milpitas, CA (US);
Xiaoxia Wu, Milpitas, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/02 (2006.01); G11C 7/06 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 7/06 (2013.01); G11C 7/12 (2013.01);
Abstract
This disclosure provides a method and apparatus for detecting a transition of a memory cell current from a first state to a second state. An example apparatus includes a memory cell, a supplemental current source, a comparator, a reference voltage and a reference current source in a configuration that allows for real time detection of the transition of a memory cell. Detection of a memory cell current transition is captured when the output of the comparator transitions from one state to a second state in response to a sensing voltage exceeding the reference voltage.