The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Sep. 21, 2016
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Keita Takada, Tokyo, JP;

Nobuya Koike, Tokyo, JP;

Akihiro Nakahara, Tokyo, JP;

Makoto Tanaka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 1/30 (2006.01); G01R 17/16 (2006.01); G01R 19/00 (2006.01); H01L 23/535 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
G01R 17/16 (2013.01); G01R 19/0092 (2013.01); H01L 23/535 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 29/0847 (2013.01); H01L 29/41741 (2013.01); H01L 29/7803 (2013.01); H01L 29/7813 (2013.01); H01L 29/7815 (2013.01); H01L 21/823487 (2013.01); H01L 27/0251 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/181 (2013.01);
Abstract

A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.


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