The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Dec. 02, 2015
Melexis Technologies NV, Tessenderlo, BE;
X-fab Semiconductor Foundries Ag, Erfurt, DE;
Appolonius Jacobus Van Der Wiel, Duisburg, BE;
Uwe Schwarz, Erfurt-Niedernissa, DE;
Rudi De Winter, Heusden-Zolder, BE;
MELEXIS TECHNOLOGIES NV, Tessenderlo, BE;
X-FAB SEMICONDUCTOR FOUNDRIES AG, Erfurt, DE;
Abstract
A method for manufacturing a system in a wafer for measuring an absolute and a relative pressure includes etching a shallow and a deep cavity in the wafer. A top wafer is applied and the top wafer is thinned for forming a first respectively second membrane over the shallow respectively deep cavity, and for forming in the top wafer first respectively second bondpads at the first respectively second membrane resulting in a first respectively second sensor. Back grinding the wafer results in an opened deep cavity and a still closed shallow cavity. The first bondpads of the first sensor measure an absolute pressure and the second bondpads of the second sensor measure a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.