The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Nov. 04, 2015
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Inventors:
Tsubasa Honke, Itami, JP;
Kyoko Okita, Itami, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/12 (2006.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); C30B 29/36 (2006.01); C30B 33/10 (2006.01); B08B 3/08 (2006.01); B24B 37/04 (2012.01); C01B 32/956 (2017.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01);
U.S. Cl.
CPC ...
C30B 33/12 (2013.01); B08B 3/08 (2013.01); B24B 37/044 (2013.01); C01B 32/956 (2017.08); C09G 1/02 (2013.01); C09K 3/1409 (2013.01); C30B 29/36 (2013.01); C30B 33/10 (2013.01); H01L 21/02052 (2013.01); H01L 21/30625 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01);
Abstract
A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear etch-pit groups observed in the main surface is equal to or less than the diameter of the substrate.