The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Jun. 27, 2013
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Itaru Yanagi, Tokyo, JP;

Riichiro Takemura, Tokyo, JP;

Yoshimitsu Yanagawa, Tokyo, JP;

Takahide Yokoi, Tokyo, JP;

Takashi Anazawa, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C12Q 1/6874 (2018.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); G01N 27/414 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
C12Q 1/6874 (2013.01); G01N 27/4145 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/283 (2013.01); H01L 21/30604 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 29/4908 (2013.01); H01L 29/66787 (2013.01);
Abstract

In the field of the next generation DNA sequencer, a method for integrating very high sensitive FET sensors having side gates and nanopores as devices used for identifying four kinds of base and for mapping the base sequence of DNA without using reagents, and a semiconductor device having selection transistors and amplifier transistors respectively corresponding to the FET sensors having side gates and nanopores respectively so as to be able to read the variation of a detection current based on the differences among the charges of the four kinds of base without deteriorating the detection sensitivity of the FET sensor, are presented.


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