The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Aug. 17, 2017
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventors:

Takayuki Aoyama, Kyoto, JP;

Shinichi Kato, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H05B 3/00 (2006.01); H01L 21/768 (2006.01); H01L 21/687 (2006.01); H01L 21/285 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H05B 3/0047 (2013.01); H01L 21/0485 (2013.01); H01L 21/28512 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); H01L 21/68785 (2013.01); H01L 21/76889 (2013.01); H01L 21/046 (2013.01);
Abstract

Flash light is emitted from flash lamps to the surface of a semiconductor substrate on which a metal layer has been formed for one second or less to momentarily raise temperature on the surface of the semiconductor substrate including the metal layer and an impurity region to a processing temperature of 1000° C. or more. Heat treatment is performed by emitting flash light to the surface of the semiconductor substrate in a forming gas atmosphere containing hydrogen. By heating the surface of the semiconductor substrate to a high temperature in the forming gas atmosphere for an extremely short time period, contact resistance can be reduced without desorbing hydrogen taken in the vicinity of an interface of a gate oxide film for hydrogen termination.


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