The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Jun. 26, 2015
Applicant:

Luxtera, Inc., Carlsbad, CA (US);

Inventors:

Subal Sahni, La Jolla, CA (US);

Kam-Yan Hon, Oceanside, CA (US);

Attila Mekis, Carlsbad, CA (US);

Gianlorenzo Masini, Carlsbad, CA (US);

Lieven Verslegers, La Jolla, CA (US);

Assignee:

Luxtera, Inc., Carlsbad, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/225 (2006.01); H04B 10/00 (2013.01); H04B 10/548 (2013.01); G02F 1/025 (2006.01);
U.S. Cl.
CPC ...
H04B 10/548 (2013.01); G02F 1/025 (2013.01);
Abstract

Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.


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