The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Jul. 22, 2015
Seoul National University R&db Foundation, Seoul, KR;
Institute for Basic Science, Daejeon, KR;
Daehyeong Kim, Incheon, KR;
Taeghwan Hyeon, Seoul, KR;
Moonkee Choi, Seoul, KR;
Jiwoong Yang, Seoul, KR;
Kwanghun Kang, Goyang, KR;
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
INSTITUTE FOR BASIC SCIENCE, Daejeon, KR;
Abstract
A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.