The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Dec. 28, 2015
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Masahiko Onishi, Anan, JP;

Yasuhiro Miki, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/56 (2010.01); H01L 33/44 (2010.01); H01L 33/58 (2010.01);
U.S. Cl.
CPC ...
H01L 33/56 (2013.01); H01L 33/44 (2013.01); H01L 33/58 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/181 (2013.01);
Abstract

A light emitting element includes an n-type semiconductor layer having an upper surface; a p-type semiconductor layer over a portion of the upper surface of the n-type semiconductor layer, the p-type semiconductor layer having an upper surface; a protective film continuously covering the n-type semiconductor layer and the p-type semiconductor layer, the protective film defining an n-side opening at the upper surface of the n-type semiconductor layer and a p-side opening at an upper surface of the p-type semiconductor layer; a p-side electrode on the upper surface of the p-type semiconductor layer that is exposed in the p-side opening; an n-side electrode on the upper surface of the n-type semiconductor layer that is exposed at the n-side opening, n-side electrode having an n-side light-transmissive electrode; and an n-side pad electrode on the upper surface of the n-side light-transmissive electrode.


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