The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Apr. 28, 2016
Applicant:
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Inventors:
Yoshihiro Ueta, Osaka, JP;
Shigetoshi Ito, Osaka, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/16 (2010.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/007 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01L 33/0079 (2013.01); H01L 33/22 (2013.01);
Abstract
A nitride semiconductor light-emitting device includes a substrate which includes polycrystal silicon dioxide or amorphous silicon dioxide as a main component, an underlying layer that is provided on the substrate, and a multilayer structure that is provided on the underlying layer and includes at least one layer made of a nitride semiconductor single crystal. The underlying layer includes crystals oriented to a c-axis and is formed by sputtering.