The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Oct. 16, 2012
Applicant:

First Solar, Inc., Perrysburg, OH (US);

Inventors:

Igor Sankin, Perrysburg, OH (US);

Markus Gloeckler, Perrysburg, OH (US);

Benyamin Buller, Perrysburg, OH (US);

Kieran Tracy, Perrysburg, OH (US);

Assignee:

First Solar, Inc., Perrysburg, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/065 (2012.01); H01L 31/18 (2006.01); H01L 31/0296 (2006.01); H01L 31/073 (2012.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/065 (2013.01); H01L 31/02966 (2013.01); H01L 31/073 (2013.01); H01L 31/18 (2013.01); H01L 31/1828 (2013.01); H01L 31/1832 (2013.01); H01L 21/0248 (2013.01); H01L 21/0251 (2013.01); H01L 21/02411 (2013.01); H01L 21/02422 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 21/02562 (2013.01); Y02E 10/543 (2013.01); Y02P 70/521 (2015.11);
Abstract

An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.


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