The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Dec. 26, 2016
Fuji Electric Co., Ltd., Kanagawa, JP;
Hiroyuki Tanaka, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
To provide a semiconductor device with a high degree of flatness, provided is a semiconductor device including a semiconductor substrate; an element insulating film that is formed on a front surface side of the semiconductor substrate and includes a groove; and a semiconductor element provided in the groove of the element insulating film. The semiconductor device further comprises a withstand voltage structure farther to the outside than the active region, the withstand voltage structure includes a field insulating film formed on the front surface of the semiconductor substrate, and film thickness of a region of the element insulating film where the groove is not provided is the same as film thickness of the field insulating film.